IntelliEtch is an advanced ab initio based anisotropic etch process simulation tool for MEMS design and process control

Atomistic Etch Simulator                                                                     

Atomistic etch simulation IntelliEtch is a self-contained, user-friendly, multiscale atomistic simulator of wet and DRIE etching with multi-mask patterning capabilities. Based on an octree representation of the silicon sample, it uses both Kinetic Monte Carlo (KMC) and Cellular Automata (CA) algorithms for propagating the surface forward in time. In addition to offering assistance for MEMS engineering design, IntelliEtch enables a deeper insight of key features such as the atomistic structure of any surface orientation, the step flow nature of wet etching, and the development of characteristic morphologies in the evolving etch front.

Etch any surface orientation                                                               

With IntelliEtch, one can pattern and etch any surface orientation (not only the traditional {100}, {110} and {111} wafers), expanding the possibilities of MEMS design and enabling the testing of vicinal surface effects. Furthermore, IntelliEtch makes possible the patterning and etching of non-flat substrates with flat, round, vertical, or diagonal features. Even spherical silicon samples can be patterned and etched. It is also possible to explore and fine-tune a particular process by etching a structure atom-by-atom.

  (click to enlarge)

IntelliEtch at work
Using advanced ab initio (first principles) based simulation techniques, IntelliEtch can simulate down to atomistic scales. Whatever your etch scale, IntelliEtch handles it with panache

Easy documentation and export                                                         

The simulator conveniently records modifications to each project as a separate file for easy reproduction and documentation, freeing the user from tedious bookkeeping tasks. The simulation state can be automatically saved at user-defined checkpoints, enabling the user to perform other tasks while running a simulation. After the simulation is complete, IntelliEtch offers easy integration with Finite Element Analysis software for thermal and mechanical analysis of the etched structure.

           (click to enlarge)           

Advanced etch features
(a) Perform composite etches (b) Non-flat surfaces: simulate roughness and waviness effects

Powerful Capabilities                                                                           

IntelliEtch can simulate complex MEMS structures by enabling:

• the simultaneous use of multiple silicon nitride and oxide masks, applied to the top or bottom of the wafer

• the definition and etching of buried insulator layers - as in SOI wafers - allowing accurate control of the etch depth in applications

• the definition and etching of sacrificial layers - such as polysilicon - allowing the simulation of more complex structures

Top features                                                                                         

Ab initio effects FIrst principle-based etch simulation; includes effects of steric interaction, backbond weakening, and impurity micromasking

Composite processing Effects of multi-masking, multiple process steps

Real world usage Predict high-order planes, surface morphology, and design corner compensations

Validated simulator Detailed experimental backing

Validated database Database for etching based upon pioneering work of Dr. Sato at Nagoya University

Export to FEA Direct export to IntelliSuite and other industry formats